Damage Studies of Ion-Implanted GaAs Using Conductivity Profiles.
Abstract
The understanding of damage produced during ion-implantation is an important first step towards predicting the semiconducting behavior of GaAs samples. A new technique for measuring damage has been developed by the Air Force Avionics Laboratory. This method involves the measurement of a differential electrical conductivity profile. Samples of GaAs doped with S(+), Te(+) and Ar(+) ions were prepared for the purpose of profiling them with this technique.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1978
- Accession Number
- ADA064067
Entities
People
- Russell M. Solt
Organizations
- Air Force Institute of Technology