Evaluation of Gallium Nitride for Active Microwave Devices.
Abstract
Thick GaN crystals can now be grown (by the non-equilibrium CVD reaction of GaCl and NH3) that are free of the precipitates, voids and microcracks that plagued us last year. However, they are still dominated electrically by a native shallow donor effect. A high pressure-high temperature system for annealing crystals and for growing crystals by liquid phase epitaxy under high pressure N2 instead of NH3 has been assembled and calibrated, and the first epxeriments begun to eliminate the native donor, so as to prepare samples suitable for high field electrical measurements.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1978
- Accession Number
- ADA064299
Entities
People
- M. Gershenzon
Organizations
- University of Southern California