Electrical Characterization of GaAs Anodic Oxides Using Isothermal Dielectric Relaxation Current.

Abstract

The theory and practical limitations of the IDRC technique of Mar and Simmons are discussed. An improved version of the original experiment that incorporates digital processing of the data is described. Results were obtained for Si and used to establish confidence in the new procedure. Anodic oxides of GaAs were then studied, and the results indicate that there are large densities of both fixed and mobile trap states at and near the interface. The mobile trap states behave as though negatively charged. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1978
Accession Number
ADA064418

Entities

People

  • Martin J. Biancalana

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Capacitance
  • Chemistry
  • Conduction Bands
  • Crystal Lattices
  • Crystal Structure
  • Digital Data
  • Electrons
  • Energy Bands
  • Energy Levels
  • Fermi Levels
  • High Density
  • Materials
  • Materials Science
  • Measurement
  • Plastic Explosives

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Semiconductor Device Technology