Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide.

Abstract

Glow Discharge Optical Spectroscopy (GDOS) was used as a technique for obtaining impurity concentration profiles of annealed and unannealed ion implanted GaAs samples. Germanium, magnesium, and boron ions were implanted at energies of 60keV or 120keV and fluences of 1 or 5 times 10 to the 15th power/sq.cm. The samples were sputtered in a dc glow discharge. The intensities of strong emission lines (proportional to concentration) were calibrated using pure elements as standards, providing impurity concentration profiles. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1978
Accession Number
ADA064419

Entities

People

  • Kenneth R. Williamson

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Chemical Reactions
  • Crystal Lattices
  • Electrical Engineering
  • Electrons
  • Elements
  • Emission
  • Gallium
  • Gallium Arsenides
  • Germanium
  • Ion Implantation
  • Measurement
  • Recording Systems
  • Semiconductor Devices
  • Semiconductors
  • Spectroscopy
  • Standards

Fields of Study

  • Materials science
  • Physics

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene