Optical-Microwave Interactions in Semiconductor Devices.

Abstract

The feasibility of achieveing optical injection locking of millimeter-wave IMPATT oscillators was investigated by calculating the efficiency of subharmonic optical injection locking of IMPATT oscillators. Calculations were carried out by adding a time-varying reverse saturation current term, which was generated by the incident optical signal, to the IMPATT avalanche equation. The results indicated that a locking range on the order of 100 MHz could be achieved for X-band IMPATT oscillators if modulated optical signal was converted into rf photocurrent efficiently. The injection-locking characteristics of X-band Si IMPATT oscillators were further investigated by measuring the locking range as a function of locking gain. Subharmonic locking was used with a frequency ratio ranging from 3:1 to 8:1. It was observed that a locking range of several megahertz was achievable with an oscillator at 8.11 GHz. It was also noted that even subharmonic locking was preferred over odd subharmonic locking for our oscillators.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1979
Accession Number
ADA064702

Entities

People

  • Huan-wun Yen
  • Luis Figueroa

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Birds
  • Circuits
  • Diodes
  • Electric Fields
  • Electronics Laboratories
  • Field Effect Transistors
  • Frequency
  • Frequency Shift
  • Impatt Diodes
  • Laser Diodes
  • Lasers
  • Oscillators
  • Q Factor
  • Resonators
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Optical Physics and Photonics.

Technology Areas

  • 5G
  • Microelectronics