Cathodoluminescence on the Effects of Te Implantation and Laser Annealing in Gallium Arsenide.
Abstract
The United States Air Force uses devices which must operate in high temperature environments where intrinsic (pure) semiconductors do not perform well. With the intentional addition of impurity ions (doping) into the lattice of a crystal, the semiconductor gallium arsenide (GaAs) should have the electrical properties required for operation in the environments mentioned above. Gallium arsenide is an intermetallic compound formed from a group III element (gallium) and a group V element (arsenic). It crystallizes in the zinc blende structure and has physical properties which are similar to those of the covalent group IV semiconductors, germanium and silicon. The electrical properties, such as high electron mobility, have made GaAs very useful in many technical applications. However, the promise that GaAs shows for use in future devices, such as microwave devices, is based upon the ability to provide the necessary impurity concentrations in the 'pure' crystal.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1978
- Accession Number
- ADA064761
Entities
People
- Ronald L. Lusk
Organizations
- Air Force Institute of Technology