Optical Bi-Refringent Technique in Defect Characterization.

Abstract

Defects in GaP, Garnets, and Si have been examined and characterized by stress induced optical bi-refringence. This technique is explored in examining devices and it is suggested that its utility lies in the early stages of device fabrication rather than towards the end. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 30, 1978
Accession Number
ADA064844

Entities

People

  • P. Chaudhari

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Analyzers
  • Converters
  • Crystal Growth
  • Crystals
  • Electron Microscopy
  • Fabrication
  • Grain Boundaries
  • Image Converters
  • Low Angles
  • Materials
  • Microscopes
  • Microscopy
  • Optics
  • Polarizers
  • Refractive Index
  • X Rays

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Theoretical Analysis.