Advanced Infrared Detectors for Future Missile Seekers.

Abstract

New technology was utilized to design and fabricate a self-filtering infrared detector (SFD) optimized for a specific target signature. The SFD was prepared from vacuum deposited, composition-tuned epitaxial films of the semiconductor alloy, PbS(x)Se(1-x). A filter and detector layer were both grown on opposite sides of a BaF2 substrate. The detector element was a p-n junction formed by depositing a Pb contact onto a p-type detector layer surrounded by a Au ohmic contact.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1978
Accession Number
ADA064865

Entities

People

  • Richard Alan Fantauzzo

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Sensors
  • Weapons Technologies

DTIC Thesaurus Topics

  • Band Theory Of Solids
  • Charge Carriers
  • Detectors
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Infrared Detectors
  • Materials
  • Metal-Semiconductor Junctions
  • Optical Properties
  • P-N Junctions
  • Quantum Efficiency
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics
  • Target Signatures
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Sensor Fusion and Tracking Systems.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene