Investigation of Web-Dendrite Silicon.
Abstract
Web-dendrite silicon was investigated to establish its potential value as a starting material for the fabrication of infrared detector arrays. The van der Pauw techniques was used to measure the electrical transport properties of this material and assess its homogeneity. A total of eight samples were prepared from boron-doped, gallium-doped, and 'undoped' web provided by the Westinghouse Electric Corporation. The samples were evaluated with respect to growth direction and position in the web. The growth procedures of web silicon are discussed; including a description of the defects common to this material. The results are analyzed to determine uniformity, impurity concentrations, and the activation energy of the majority carriers. These particular web specimens are not suitable as candidates for device fabrication, due to the large numbers of dislocations/defects they were found to contain. It is not known whether the dislocations and defects observed are common to all dendritic-web materials. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1978
- Accession Number
- ADA064933
Entities
People
- Thomas J. Settecerri
Organizations
- Air Force Institute of Technology