Investigation of InP Technology.
Abstract
Undoubtedly InP is becoming a very important semiconductor, in particular for optoelectronic applications. Although InP-based device results are appearing with increased frequency in both microwave and optoelectronic areas, substrate growth and characterization have been limited to a few government contract reports. This program is aimed at the investigation of InP-based technology from polycrystalline synthesis to epitaxial growth. Of primary consideration is the development of technology for reliably synthesizing polycrystalline InP from the elements. Even though the growth of single-crystal InP is well developed, based on the commercial equipment for LEC-growth of GaAs and GaP, very little information is available on the synthesis of InP from the elements.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1979
- Accession Number
- ADA065322
Entities
People
- George A. Antypas