Investigation of Advanced Technology and High Field Electronic Properties of InP for Microwave Devices.

Abstract

Progress in the understanding of preparation and properties of InP material has been made in the following main areas. First in the area of liquid phase epitaxial growth a breakthrough has been made in the understanding of parameters required for the preparation of high purity material. By secondary ion mass spectrometry the single most important residual donor impurity in layers was found to be silicon. Seocnd, there is a dynamic production of volatile SiO which contaminates the melt from the walls of the growth tube. Calculations of the thermodynamics of these systems showed that the silicon content could be reduced by baking a lower and lower temperatures.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1979
Accession Number
ADA065364

Entities

People

  • Colin E. C. Wood
  • Lester F. Eastman

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics
  • C4I

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Electrical Engineering
  • Electrical Properties
  • Engineering
  • Epitaxial Growth
  • Ion Implantation
  • Ions
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Mass Spectrometry
  • Materials
  • Military Research
  • Phase
  • Spectrometry
  • Spectroscopy
  • Universities

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene