Study of Electronic Transport and Breakdown in Thin Insulating Films
Abstract
Recent progress is reported in an ongoing program of studies of high- field effects in thin insulating films on semiconducting substrates. The investigations reported here include further studies of the high-field generation of interface states and electron traps in the Si-Si02 system, a preliminary investigation of silicon dioxide grown at high pressure, and studies of CVD silicon nitride and aluminum oxide under high-field conditions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1978
- Accession Number
- ADA066918
Entities
People
- Walter C. Johnson
Organizations
- Princeton University