Development of Large Area PV HgCdTe Detectors for 2.06 and 3.85 micrometers.

Abstract

The purpose of this program was to develop large area PV HgCdTe detectors for laser receiver systems operating at 2.06 micrometers (Ho:YLF laser) and 3.85 micrometers (DF laser). The work accomplished included: Evaluation of three different methods of crystal growth, the preparation of low acceptor concentration p-type base material by means of gold diffusion, development of a junction formation method utilizing boron ion implantation, and evaluation of those detector characteristics which control operation in the 1 MHz region.

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1978
Accession Number
ADA067306

Entities

People

  • P. R. Bratt

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antireflection Coatings
  • Band Gaps
  • Charge Carriers
  • Crystal Growth
  • Detectors
  • Energy Bands
  • Frequency Response
  • Heat Energy
  • Ion Implantation
  • Laser Diodes
  • Measurement
  • Phase Diagrams
  • Quantum Efficiency
  • Regions
  • Semiconductors
  • Thermodynamic Properties
  • X Rays

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy