Transient Radiation and Dose-Enhancement Effects in Transistors.

Abstract

The response of bipolar transistors to ionizing radiation is considered for a relatively soft x-ray spectrum. A plasma-focus device was used to irradiate several silicon transistors under controlled conditions so that the relative contributions to the radiation response could be isolated. The photocurrent response resulting from direct photon interaction with the silicon chip was in excellent agreement with computations made on the basis of device geometry; however, contributions from packaging effects were found to be less predictable. The high Z package resulted in a nonuniform dose deposition in the device. The resultant dose enhancement is compared with integrated depth-dose profiles calculated with a Monte Carlo electron transport code. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 22, 1978
Accession Number
ADA067629

Entities

People

  • G. Marshall Molen
  • Kenneth W. Paschen
  • Melvin J. Bernstein
  • Robert H. Vandre

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Cosmic Rays
  • Electronic Components
  • Ionization
  • Ionizing Radiation
  • Materials
  • Materials Science
  • Radiation
  • Radiation Effects
  • Security
  • Semiconductor Devices
  • Semiconductors
  • Spectra
  • Test And Evaluation
  • Transistors
  • X Ray Spectra
  • X Rays

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.

Technology Areas

  • Microelectronics