Growth and Homogeneity Characterization of Mercury Cadmium Telluride Crystals.

Abstract

We have grown epitaxial layers of mercury telluride by the new method of current controlled liquid phase epitaxy (CCLPE). We have designed and constructed the apparatus necessary to grow highly homogeneous crystalline layers of this material by this new technique. The design has been tested repeatedly and a number of crystalline layers have been successfully grown. These layers have been studied micrographically and with the use of X-ray diffraction and electrolyte electroreflectance techniques. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1979
Accession Number
ADA067670

Entities

People

  • Fred Pollak

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Energy
  • Epitaxial Growth
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Liquids
  • Materials
  • Optical Phenomena
  • Peltier Effect
  • Phase
  • Semiconductors
  • Steady State
  • Temperature Gradients
  • United States

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology