Interface Doping of MNOS Transistors.
Abstract
This Interim Technical Report describes the progress for the 1 April 1976 to March 1977 period of Phase I of the Interface Doping of MNOS program. Use of Cr, W, Pt, Ni, Pd and Ir as interface dopant in monolayer quantities between an oxide layer of Fowler-Nordheim tunneling thickness and 300-500A of Si3N4 gives MNOS memory retention of electrons of many centuries even at elevated temperatures, while retaining high write speed. Endurance is limited to 1000 write/erase cycles. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1977
- Accession Number
- ADA067857
Entities
People
- C. A. Neugebauer
- M. M. Barnicle
Organizations
- General Electric