Development of Hydrogen and Hydroxyl Contamination in Thin Silicon Dioxide Thermal Films.
Abstract
Hydrogen and hydroxyl incorporation into thin silicon dioxide films thermally grown on silicon in dry oxygen atmospheres contained in resistance-heated fused silica or polycrystalline silicon tubes is analyzed. The mechanisms leading to incorporation of these impurities in the film are discussed in terms of trace water and hydrocarbon contamination in the oxygen used, room ambient humidity permeation through the fused silica tube, the silicon wafer preparation prior to oxidation, and other environment factors. The most significant reactions occurring the water-silica-silicon system during wafer oxidation at temperatures in the range from 800 C to 1200 C are discussed. It is shown that, during the oxidation period required to grow a 100-nm thick silicon dioxide film on a (100) silicon wafer in nominally dry oxygen containing water contamination in the ppm range, the introduction of hydrogen and hydroxyl contamination into the oxide film can be explained in terms of the water-silica interaction. The use of polycrystalline silicon oxidation tubes is discussed with reference to the inherent water gettering action of silicon at oxidation temperatures. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1979
- Accession Number
- ADA067963
Entities
People
- Santos Mayo
- William H. Evans
Organizations
- National Institute of Standards and Technology