Total-Dose Radiation-Hardened CMOS Integrated Circuits.

Abstract

Processing techniques for fabricating CMOS LSI arrays with 1,000,000 rads (Si) total-dose radiation hardness were developed under this contract. Radiation-hardened processes for these technologies include bulk-silicon aluminum gate, bulk-silicon silicon-gate closed CMOS logic (C2L), and silicon-gate CMOS/SOS. Megarad total-dose hardness was demonstrated on several LSIs with silicon-gate technologies, such as the CDP1802 microprocessor and an 8-bit arithmetic logic unit (ALU). The total-dose and transient-radiation test results obtained with the ALU (TCS069) clearly demonstrated the advantages of combining radiation-hardened standard cell designs with radiation-hardened processing. These developments, funded under this contract, should dramatically increase the use of CMOS arrays in militaryt weapons systems and spacecraft used in interplanetary explorations. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1978
Accession Number
ADA067975

Entities

People

  • S. Cohen

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Barometric Pressure
  • Dose Rate
  • Fabrication
  • Failure Mode And Effect Analysis
  • Films
  • Integrated Circuits
  • Ion Implantation
  • Ionizing Radiation
  • Measurement
  • Military Research
  • Nuclear Radiation
  • Packing Density
  • Radiation
  • Radiation Effects
  • Standards
  • Test And Evaluation

Fields of Study

  • Physics

Readers

  • Computer Engineering
  • Nuclear and Radiation Engineering.
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Space