Interface Doping of MNOS Transistors.
Abstract
The objective of this program is threefold: First to survey interface dopants suitable for use in MNOS nonvolatile storage transistors, to identify optimum dopant materials, concentrations, and deposition techniques, and to evaluate the write characteristics, retention, and endurance of interface doped MNOS devices by accelerated test methods. Second, to investigate the feasibility of fabricating n-channel interface doped MNOS transistors, both memory and stable gate and assess device yields. Third, to investigate their radiation hardness toward total dose ionizing radiation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1978
- Accession Number
- ADA068493
Entities
People
- C. A. Neugebauer
- M. M. Barnicle
Organizations
- General Electric