Injection Limited Gunn Devices.
Abstract
As a continuation of our experimental work on epitaxial growth of high quality GaAs and on low resistance ('ohmic') contacts (Grant No. DAERO-78-G-049) devices with field effect transistor cathode contacts for controlling injection have been fabricated and tested. The theoretically predicted improvements on bandwidth and efficiency have not yet been observed experimentally. On the contrary, performance of the Gunn diode always deteriorated whenever a bias voltage was applied to the gate, although domain formation could be suppressed. The results indicate that the basic concept of using a field effect cathode as the injection limiting contact is correct and that there is reasonable hope that improved operation should be possible with this device if the correct doping density and a sufficiently small gate length is used. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1979
- Accession Number
- ADA069152
Entities
People
- H. Thim
- Ulrich Traxlmayr