Electronic Material Technology.
Abstract
This report discusses the programs and progress made in the in-house portion of the Electronic Materials Program. The growth of semi-insulating III-V semiconductors using oxygen doping is discussed, including electrical and device characterization. Results of indium phosphide material preparation and bulk single cyrstals as well as epitaxial films growth are summarized. High magnetostrictive materials have initial permeability and coupling constants increased by nearly an order of magnitude. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 18, 1979
- Accession Number
- ADA069471
Entities
People
- H. Lessoff
Organizations
- United States Naval Research Laboratory