Dynamic Properties of Interface States in MOS-Structures.
Abstract
Within this project details of the dynamic properties of impurities implanted into the interface of MOS structures are investigated. Interface state density, trapping time constants and capture cross sections are measured. The CC-DLTS-method (Constant Capacitance Deep Level Transient Spectroscopy) is a valuable means to tackle the topical problems, especially because it requires less measuring time than competing methods. The presently used evaluation method is over-simplified and yields occasionally misleading results. This was revealed by an experimental check with the conductance method. An improved evaluation procedure is suggested. The conductance method was applied to the measurement of Cs-implanted and non-implanted MOS structures of n- and p-type Si. The two n-type samples behave similarly; the interface state density increases and the capture cross section decreases towards the conduction band edge. These properties appear to a greater extent with the Cs-implanted sample. With the p-type samples the limits of the conductance methods are encountered. These limits are discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1979
- Accession Number
- ADA069752
Entities
People
- A. Goetzberger
- E. Klausmann