Studies of High-Dose Ion Implantation in Silicon.

Abstract

Properties of high-dose BF2(+), Si(+) + B(+), and Ga(+) implanted Si are studied by differential resistivity and Hall effect measurements, secondary ion mass spectrometry (SIMS), deep-level transient spectroscopy (DLTS), and Auger electron spectroscopy (AES). (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1978
Accession Number
ADA069779

Entities

People

  • Mon Yen Tsai

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Diodes
  • Electrical Engineering
  • Electrical Properties
  • Electron Spectroscopy
  • Electronics Industry
  • Electronics Laboratories
  • Integrated Circuits
  • Mass Spectrometry
  • Measurement
  • Mobility
  • Semiconductor Devices
  • Semiconductors
  • Spectrometry
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics