Atomic and Electrical Profile Studies of Ion-Implanted Semiconductors.
Abstract
The distribution of ion-implanted impurities in semiconductors was studied using atomic and electrical profiling techniques. The atomic profiles were obtained by Glow Discharge Optical Spectroscopy (GDOS). The GDOS technique, experimental system, and elemental sensitivity are discusssed in detail. The impurity distributions of arsenic-implanted silicon and germanium-implanted gallium arsenide are investigated. High dose arsenic implants in silicon exhibit a concentration-dependent diffusion at high temperatures which leads to a dramatic redistribution from the original implanted profile. The Ge implanted into GaAs shows very little diffusion even for high concentrations annealed at 900 C. The diffusion coefficient of Ge in GaAs is estimated to be 6 times 10 to the -15th power sq. cm./sec. at 900 C. The electrical profiles were obtained using Hall measurements in conjunction with successive layer removal. The carrier profiles for As in Si were in substantial agreement with the atomic distributions. The carriers have a concentration limit of about 2 times 10 to the 20th power /cu. cm. and excellent electrical activation can be obtained for 1000 C anneals. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1978
- Accession Number
- ADA069782
Entities
People
- Gerald Twiggs Marcyk
Organizations
- University of Illinois Urbana–Champaign