Study Czochralski Liquid-Seal Crystal Growing Technique.
Abstract
N-Type, P-Type and semi-insulating (Chrome dope) single crystals of Gallium Arsenide were grown using the Czochralski Liquid-Seal Technique. Boron Nitride was selected as the crucible material that would yield the best quality single crystals. Single Gallium Arsenide crystals of up to 300 grams were grown as a result of modifications made in the puller apparatus. Experiments were conducted to identify the cause of impurity contamination during the growth process. The results of these experiments indicated that: 1) The introduction of Boron Oxide (B2O3) to the Gallium Arsenide melt absorbed impurities. 2) Silicon (si) was being introduced to the melt by the breakdown of the quartz (2SiO2 2SiO+O2). This was caused by the natural gas-oxygen torch, which heats the quartz chamber to prevent Gallium Arsenide condensation. 3) A special viewport, heated by a resistance furnace rather than a natural gas-oxygen torch was used to reduce silicon contaminants. As a result of this experiment, an undoped semi-insulating crystal of extremely high purity was grown. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1979
- Accession Number
- ADA070280
Entities
People
- John K. Kennedy
- Worth P. Allred