Exploratory Development on Silicon Material for ladir.
Abstract
This report contains a background description of the program, an evaluation of test approaches, test results, and a description of the process which has been developed to produce silicon material which meets the requirements of the contract. Where applicable, these subjects are discussed under the following tasks: Task I, Purification of Intrinsic Silicon; Task 2, Growth of Doped Silicon Crystals; Task 3, Crystal Material Evaluation; and Task 4, Definition of Growth Process. A major conclusion of the program is that the most suitable counter dopant for the residual boron concentration is antimony (Sb). This impurity has characteristics that are compatible with the other impurities in the material and remains stable during the on-chip microelectronics processing. In addition, it is easy to introduce into the silicon ingot during the doping process and distributes evenly over the bulk.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1977
- Accession Number
- ADA070740
Entities
People
- M. C. Arst