Depth and Carrier Concentration of Photoluminescence Features in Heat Treated GaAs:Si.

Abstract

The photoluminescence (PL) spectra of silicon doped n-type GaAs of four different carrier concentrations from 4 x 10 to the 15th power to 3 x 10 to the 18th power/cc were examined. Successive measurements as the samples were annealed for times from 15 to 60 minutes at 600-700 C, and as they were successively etched back, revealed that all PL changes were surface related, with a typical depth of 1 micron. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1979
Accession Number
ADA070809

Entities

People

  • Hulya Birey
  • James Sites

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Band Gaps
  • Contracts
  • Electron Microscopy
  • Electrons
  • Elements
  • Emission
  • Energy Bands
  • Gallium Arsenides
  • Heat Treatment
  • Materials
  • Measurement
  • Military Research
  • Photoluminescence
  • Radiation
  • Scanning Electron Microscopy
  • Universities

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology