Ion Beam Sputtered A10xNy Encapsulating Films.

Abstract

The encapsulating properties of 800-1500 A aluminum oxynitride films, deposited on GaAs by low energy ion beam sputtering, were characterized by optical microscopy, electrical conductivity, Auger profiling, and ellipsometry. The better films were found to withstand annealing to above 900 C with minimal physical deterioration. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1979
Accession Number
ADA070863

Entities

People

  • Huelya Birey
  • J. F. Wager
  • J. R. Sites
  • Sung-jae Pak

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum Nitrides
  • Auger Electrons
  • Electrical Conductivity
  • Electronics
  • Electrons
  • Encapsulation
  • Films
  • Gallium
  • Gallium Arsenides
  • Heat Treatment
  • Ion Beams
  • Measurement
  • Microscopy
  • Military Research
  • Refraction
  • Refractive Index
  • Spectra

Fields of Study

  • Materials science
  • Physics

Readers

  • Thin Film Deposition Science.