Photoluminescence of Gallium Arsenide Encapsulated with Aluminum and Silicon Nitride Films.

Abstract

Aluminum and silicon nitride films were deposited on lightly doped n-type GaAs:Si by low energy ion beam sputtering. The films showed no signs of deterioration when annealed at 900 C, and the GaAs photoluminescence spectra showed new features only at the higher annealing temperatures. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1979
Accession Number
ADA070866

Entities

People

  • Huelya Birey
  • J. R. Sites
  • Sung-jae Pak

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Aluminum
  • Aluminum Nitrides
  • Annealing
  • Ceramic Materials
  • Colorado
  • Encapsulation
  • Gallium
  • Gallium Arsenides
  • Impurities
  • Ion Beams
  • Ions
  • Military Research
  • Nitrogen
  • Sputtering
  • United States
  • United States Government
  • Universities

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene