Radiative Transitions Induced in GaAs by Modest Heat Treatment.

Abstract

Photoluminescence studies were made on three species of GaAs as a function of annealing time. The evolution of the spectra were carefully monitored and interpreted in terms of the creation of arsenic vacancies at the surface. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1979
Accession Number
ADA071039

Entities

People

  • Huelya Birey
  • James Sites

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Annealing
  • Colorado
  • Contracts
  • Crystal Structure
  • Electrons
  • Elements
  • Energy Bands
  • Gallium Arsenides
  • Heat Treatment
  • Lasers
  • Materials
  • Personal Information Managers
  • Photoluminescence
  • Spectra
  • United States
  • Universities

Fields of Study

  • Materials science

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Semiconductor Device Technology