Epitaxial Growth of Semi-Insulating GaAs

Abstract

The objectives of this program are to (1) develop techniques for the epitaxial growth of high-resistivity buffer layers on semi-insulating (SI) GaAs substrates, (2) investigate ion implantation of donors into GaAs over a range of 50 to 2000 keV, and (3) investigate the potential of laser annealing to remove lattice damage caused by ion implantation and to activate the implanted donors. Preliminary results on growth of Cr-doped buffer layers by vapor-phase epitaxy (VPE) were described in our previous report. These Cr-doped layers were grown using the Ga/HC1/AsH3/H2 system. Based on these results specifications for a new semi-automatic gas-handling system were developed and the unit purchased from Crystal Specialties.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1979
Accession Number
ADA071166

Entities

People

  • C. P. Wu
  • E. C. Douglas
  • S. G. Liu
  • S. T. Jolly
  • Y. H. Yun

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Annealing
  • Electrical Properties
  • Electrons
  • Energy Levels
  • Epitaxial Growth
  • Field Effect Transistors
  • Flow Rate
  • Glass Lasers
  • Ion Implantation
  • Laser Beams
  • Lasers
  • Long Wavelengths
  • Metal-Semiconductor Junctions
  • Optical Absorption
  • Ruby Lasers
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene