Submicron FETs using Molecular Beam Epitaxy.

Abstract

Electron-beam exposure and MBE material have been used to achieve quarter-micron gate length GaAs FETs. A noise figure of 2.2 dB with an associated gain of 12 dB has been measured at 8 GHz. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 25, 1979
Accession Number
ADA071396

Entities

People

  • C. Nishimoto
  • Darci Collins
  • S. Bandy

Tags

DTIC Thesaurus Topics

  • Adhesion
  • Amplifiers
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemical Vapor Deposition
  • Damage
  • Electron Beams
  • Electron Spectroscopy
  • Epitaxial Growth
  • Field Effect Transistors
  • Low Noise
  • Materials
  • Metal-Semiconductor Junctions
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Transitions

Readers

  • Integrated Circuit Design and Technology.
  • Pulsed Power and Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics