MNOS BORAM Manufacturing Methods and Technology Project.
Abstract
A manufacturing methods project has been initiated to establish a pilot production line for metal nitride oxide semiconductor (MNOS) block oriented random access memory (BORAM) multichip hybrid circuits. This report presents an analysis of test results from an 8900 hour endurance-retention experiment. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1979
- Accession Number
- ADA071413
Entities
People
- J. E. Brewer
- R. C. Lyman