Electronic Characteristics of III-V Compounds.

Abstract

Our experimental and theoretical program has been aimed at the development of approaches and methods for the reliable electronic characterization of III-V compounds. We have investigated the determination of compositional, structural and electronic characteristics of GaAs and InP on a macro- and micro-scale. We have developed novel theoretical and experimental techniques for obtaining two-dimensional microprofiles of the carrier concentration in GaAs and InP (scanning IR absorption) and microprofiles of the minority carrrier characteristics (SEM-EBIC mode). We have also developed convenient methods for the determination of the compensation ratio and total concentration of ionized impurities which is based on electron mobility and free carrier absorption. Finally, we have initiated a comprehensive characterization study of InP in conjunction with crystal growth. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
May 01, 1979
Accession Number
ADA071447

Entities

People

  • Harry C. Gatos

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Compound Semiconductors
  • Conduction Bands
  • Corn
  • Crystal Growth
  • Crystal Lattice Vibrations
  • Electron Mobility
  • Electrons
  • Fermi Levels
  • Magnetic Fields
  • Materials
  • Materials Science
  • Measurement
  • Optical Phenomena
  • Semiconductors
  • Solid State Physics
  • Waves

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Plasma Physics.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics