An AC Large Signal Model for the GaAs MESFET.

Abstract

An AC large signal model for the GaAs FET is presented. It incorporates the device geometry and semiconductor properties and relates the terminal currents to the instantaneous applied voltages and their time derivatives. The model is efficient and fast when implemented on a digital computer. Its form is suitable for large signal component design and optimization. A power amplifier and an oscillator are analyzed to demonstrate the use of the model. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1979
Accession Number
ADA071663

Entities

People

  • Asher Madjar
  • Fred J. Rosenbaum

Organizations

  • University of Washington

Tags

Communities of Interest

  • Energy and Power Technologies
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Charge Carriers
  • Computational Science
  • Computers
  • Current Density
  • Dielectric Permittivity
  • Differential Equations
  • Diffusion Coefficient
  • Equations Of State
  • Field Effect Transistors
  • Numerical Analysis
  • Partial Differential Equations
  • Resonant Circuits
  • Semiconductors
  • Stratified Fluids
  • Three Dimensional
  • Two Dimensional
  • Voltage

Fields of Study

  • Physics

Readers

  • Control Systems Engineering.
  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics