Rectification at n-n GaAs: (Ga, Al)As Heterojunctions,

Abstract

N-N Ga (.7)Al(.3)As: GaAs heterojunction structures have been grown by LPE, with 10 to the 15th power per cu cm net carriers in the ternary. N-W profiling across the heterojunction shows an accumulation region on the GaAs side and a depletion region on the (Ga,Al)As Side. I-V characteristics at room temperature show significant rectification. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 22, 1979
Accession Number
ADA071732

Entities

People

  • Amitabh Chandra
  • Lester F. Eastman

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Conduction Bands
  • Electrical Engineering
  • Electronic Equipment
  • Electronics
  • Energy Bands
  • Engineering
  • Heterojunctions
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Low Noise
  • Materials
  • Metal-Semiconductor Junctions
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Substrates

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Solar Photovoltaics and Thermoelectric Devices.
  • Thin Film Deposition Science.