Rectification at nGaAs - n Ga.7Al.3As Heterojunctions Grown by L.P.E.,

Abstract

Heterojunctions between n-type GaAs, and high purity n-type Ga.7Al.3As have been grown by LPE at 700 C, and significant current rectification has been observed across them at room temperature. At low temperatures, the current drops and the degree of rectification increases considerably. The reverse current characteristic shows reasonable semi-quantitative agreement with theoretical I-V curves, calculated by using a thermionic emission model. The N-W profile measured across the interface indicates qualitatively the presence of a dipolar space-charge region, as expected.

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Document Details

Document Type
Technical Report
Publication Date
Jun 22, 1979
Accession Number
ADA071733

Entities

People

  • Amitabh Chandra
  • Lester F. Eastman

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Conduction Bands
  • Electrons
  • Emission
  • Energy Bands
  • Fermi Levels
  • Graphitic Materials
  • Heterojunctions
  • Low Density
  • Low Temperature
  • Materials
  • Measurement
  • Military Research
  • Quantum Wells
  • Schematic Diagrams
  • Space Charge
  • Substrates
  • Thermionic Emission

Fields of Study

  • Materials science

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Electronics Engineering
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Space
  • Space - Hall-Effect Thruster