A Study of Alloy Scattering in Ga1-xAlxAs,

Abstract

The temperature dependence of electron mobility of high purity (n < 10 to the 15th power/cc) LPE Ga(1-x)Al(x)As layers (x < .18) has been studied in the range 25 deg K - 110 deg K to measure the extents of alloy-like and ionized impurity scattering. Values of the alloy scattering parameter Delta E (which may include a contribution from space charge scattering) determined for these samples were found to lie in the range .36 eV to .51 eV, the average being .44 eV. The compensation ratio was found to be about 2, and independent of x. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 22, 1979
Accession Number
ADA071735

Entities

People

  • Amitabh Chandra
  • Lester F. Eastman

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Compensation
  • Computer Programs
  • Electron Mobility
  • Electronics
  • Electrons
  • Energy Bands
  • Equations
  • Materials
  • Measurement
  • Relaxation Time
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Space Charge
  • Thickness
  • Uncertainty

Fields of Study

  • Materials science

Readers

  • Analytical Mechanics
  • Semiconductor Device Technology
  • Spectroscopy.

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster