A Method to Overcome the Problem of Series Resistance in the Capacitance-Voltage Technique for Carrier Density Determination,

Abstract

The net donor density of n type GaAs epitaxial layers is commonly determined from capacitance - voltage measurements made on a Schottky barrier deposited on the epitaxial layer. The back ohmic contact is usually alloyed to the substrate, if it is n type, or to the layer itself, if the substrate is semiinsulating. In the latter case, the resistance R in series with the Schottky diode capacitance C can be significant and can introduce an error in the determination of C. In this note, a practical solution to the problem is proposed.

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Document Details

Document Type
Technical Report
Publication Date
Jun 22, 1979
Accession Number
ADA071736

Entities

People

  • Amitabh Chandra

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • C4I

DTIC Thesaurus Topics

  • Capacitance
  • Circuits
  • Detectors
  • Electrical Engineering
  • Engineering
  • Equivalent Circuits
  • Measurement
  • Metal-Semiconductor Junctions
  • Resistance
  • Schottky Diodes
  • Substrates

Fields of Study

  • Materials science

Readers

  • Educational Psychology
  • Plasma Physics.
  • Thin Film Deposition Science.