The Liquid Phase Epitaxial Growth of High Purity, Ga(1-x)Al(x)As,

Abstract

We report the high purity in the LPE growth of n Ga(1-x)Al(x)As (O = x or < .3) at 700 - 675 C. Carrier concentrations at or below 10 to the 15th power/cc have been consistently obtained, the lowest value achieved being under 3 x 10 to the 14th power/cc at x = .15. It has been shown that these low carrier concentrations do not result from a high compensation ratio. We believe that a dominant shallow donor impurity (thought to be sulphur) is introduced into the melt with the aluminum. We find that the second epigrowth from a melt is significantly purer than the first, presumably due to the extra baking.

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Document Details

Document Type
Technical Report
Publication Date
Jun 22, 1979
Accession Number
ADA071737

Entities

People

  • Amitabh Chandra
  • Lester F. Eastman

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Aluminum Oxides
  • Compensation
  • Environment
  • Flow
  • Flow Rate
  • Hydrogen
  • Impurities
  • Liquid Phases
  • Liquids
  • Materials
  • Mobility
  • Oxides
  • Phase
  • Scattering
  • Semiconductors
  • Space Charge

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.