Growth and Characterization of High Purity Lattice Matched GaInAs on InP,

Abstract

The high mobility of GaInAs allows its potential use as a field effect transistor active layer in either microwave, or high speed logic applications, provided that doping levels can be adequately controlled. Previous studies have identified silicon as the major residual donor in InP(2) and GaAs. Here we report on the highest purity GaInAs produced, by carefully controlling the incorporation of silicon.

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Document Details

Document Type
Technical Report
Publication Date
Jun 22, 1979
Accession Number
ADA071738

Entities

People

  • James D. Oliver
  • Lester F. Eastman

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diffraction
  • Electrical Engineering
  • Electronic Materials
  • Engineering
  • Field Effect Transistors
  • Materials
  • Mobility
  • Nitrogen
  • Scattering
  • Space Charge
  • Transistors

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Materials Science and Engineering.
  • Organizational Process Management (OPM).