Calculation of the Free Carrier Density Profile in a Semiconductor near an OHMIC Contact,

Abstract

In this note, a quantitative attempt is made to answer the question: 'To what depth does the equilibrium free carrier density penetrate into a low doped semiconductor from a heavily doped region interfacing it.' The simple answer 'A few Debye lengths' can sometimes prove to be inadequate.

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Document Details

Document Type
Technical Report
Publication Date
Jun 22, 1979
Accession Number
ADA071739

Entities

People

  • Amitabh Chandra

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Charge Density
  • Electric Fields
  • Electricity
  • Electromagnetic Fields
  • Equations
  • Metal Contacts
  • Metal-Semiconductor Junctions
  • Schools
  • Semiconductors
  • Space Charge
  • Voltage

Fields of Study

  • Materials science

Readers

  • Plasma Physics.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics