Microwave Semiconductor Research-Materials, Devices, Circuits.
Abstract
Chromium doped pure LPE GaAs buffer layers have been tested to show that they do not conduct after baking with or without Si3N4 capping, and calibrated deep level transient spectroscopy has been used to measure the density of intended chromium traps as 3 to 4 x 10 to the 14th power/cu cm. Technology for obtaining quasi-Schottky barrier gates on quaternary compound semiconductor materials has been developed. A review of the entire field of Schottky barriers on compound semiconductors has been performed, and the results published. Two-dimensional numerical analyses have enhanced the understanding of the physical basis of MESFET operation. The influence of such materials parameters as shape of the velocity-field curves and nature of the diffusivity-field characteristics on parasitic elements in MESFET's has been determined. Expected performance of silicon, GaAs, and InP short-channel MESFET's has been compared. High power GaAs FET drain voltage breakdown has been extended to about 50 V and the Electric field geometry has been measured to show a Gunn domain with thickness and shape consistent with theory.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 19, 1979
- Accession Number
- ADA071755
Entities
People
- Charles A. Lee
- G. Conrad Dalman
- J. Frey
- Lester F. Eastman
- P. R. Mcisaac
Organizations
- Cornell University