Noise Measurements on a P-Surface Channel CCD Mulitplexer.

Abstract

The noise performance of a p-surface channel CCD multiplexer was measured at room temperature and at 160 K. Theoretical calculations were made of the contributions from KTC noise, dark current noise and interface state trapping noise. The calculated values agree well with the experimental results. The design goal for these devices was temporal noise voltage of 15 microvolts (3500 rms noise carriers) referenced to the input. Cooled to 160 K we measured a noise voltage of 16 microvolts (3750 rms noise carriers) referenced to the input. The spatial or fixed pattern noise was much larger: 12 millivolts (2.9 x 10 to the 6th power rms noise carriers) referenced to the input. The noise measured on a device irradiated to 10,000 Rad(Si) under bias was approximately twice the value for an unirradiated device. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 11, 1979
Accession Number
ADA071786

Entities

People

  • J. A. Modolo
  • J. M. Killiany
  • W. C. Jenkins
  • W. D. Baker

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Analyzers
  • Capacitance
  • Capacitors
  • Charge Carriers
  • Charge Coupled Devices
  • Charge Transfer
  • Circuits
  • Digital Images
  • Frequency
  • Ionizing Radiation
  • Plastic Explosives
  • Semiconductor Devices
  • Semiconductors
  • Shift Registers
  • Shot Noise
  • Spectrum Analyzers

Fields of Study

  • Physics

Readers

  • Image Processing and Computer Vision.
  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology