Charge Storage, Retention and Endurance in MNOS Devices

Abstract

A simple analytical expression is derived for charge retention in MNOS memory devices assuming that retention loss is limited by Frenkel-Poole release from monoenergetic traps. This model shows that charge retention becomes eventually independent of the initial charge distribution. Experimental data obtained at elevated temperatures confirm this model. Charging of MNOS capacitors and memory charge retention were investigated at constant oxide fields using the staircase charging method. The data indicate participation by holes as well as by electrons in charge transport through the dual dielectric at positive gate biases.

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Document Details

Document Type
Technical Report
Publication Date
Jun 10, 1979
Accession Number
ADA071841

Entities

People

  • Kurt Lehovec

Organizations

  • University of Southern California

Tags

DTIC Thesaurus Topics

  • Capacitors
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Data Acquisition
  • Electric Fields
  • Electrons
  • Energy Bands
  • Experimental Data
  • Materials
  • Metals
  • Military Research
  • Oxide Films
  • Quantum Tunneling
  • Steady State
  • Test Methods
  • Transport Ships
  • Tunneling

Readers

  • Integrated Circuit Design and Technology.
  • Naval Personnel Management
  • Plasma Physics.

Technology Areas

  • Microelectronics