Admittance Behavior in GaAs Schottky IMPATT Diodes.

Abstract

This report presents the results of efforts, all of which are related to ionization rate effects on the admittance behavior of Low-High-Low gallium-arsenide (LHL GaAs) Schottky IMPATT diodes. The analysis were made using an improved equivalent circuit model which was developed earlier. The effects of reported different ionization rates in GaAs as well as newly generated ones were calculated and compared with experimentally measured admittance data. Generally, good agreement has been obtained. It is observed that (i) at low currents, the resonant frequency is less that the cutoff frequency and (ii) at high currents, the admittance behavior is capacitive. The results also indicate the possible existence of injection mechanisms other than impact ionization which become most apparent at high fields and are influenced by crystal orientation.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1979
Accession Number
ADA071949

Entities

People

  • O. Eknoyan

Organizations

  • Texas A&M University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Compound Semiconductors
  • Conduction Bands
  • Current Density
  • Digital Computers
  • Diodes
  • Electric Fields
  • Electrical Engineering
  • Energy Bands
  • Frequency
  • Impatt Diodes
  • Materials
  • Resonant Frequency
  • Semiconductor Junctions
  • Semiconductors
  • Universities

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Electronics Engineering
  • Plasma Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems