High Average Power Broadband Electron-Bombarded Semiconductor (EBS) Amplifier.
Abstract
During the current reporting period the analysis phase of the program was completed, which included the diode design study, thermal analysis and output matching circuit analysis. Based on the analysis, modifications are currently being made to two existing diode mask sets. Diode fabrication will not continue until the mask sets are completed. Similarly, device fabrication will not continue until additional testing has been completed on Contract no. F30602-78-C-0247, whose goal is to develop a 500 W peak, 20% duty amplifier for JTIDS in conjunction with this program. It is planned that device fabrication will resume by May, which will allow sufficient time for completion of the program on schedule.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 30, 1979
- Accession Number
- ADA072533
Entities
People
- Bruce Bell
Organizations
- Watkins-Johnson Company