Electric-Current Controlled Liquid Phase Epitaxy of Compound Semiconductors for Microwave Devices.

Abstract

A study has been made to determine the growth rate and the mechanism responsible for the growth of InP epitaxial layers while applying an electric current across the melt-substrate interface, maintaining a constant overall temperature. The object of the study was to produce layers of thicknesses up to 100 micrometers with a constant residual impurity profile for impurity levels of approximately 2 x 10 to the 15th cu cm for use in Gunn diodes and other microwave devices.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1979
Accession Number
ADA072643

Entities

People

  • Bart Van Rees
  • Colin E. C. Wood
  • Lester F. Eastman

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystals
  • Current Density
  • Diodes
  • Electric Current
  • Electrons
  • Elements
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Mass Spectroscopy
  • Materials
  • Measurement
  • Microwaves
  • Semiconductors
  • Supersaturation
  • Temperature Gradients
  • Transition Temperature

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Pulsed Power and Plasma Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics