Transient Phenomena in Electron Transport in Semiconductors.

Abstract

Theoretical efforts at understanding the band structure of, and hence electron transport in, alloy semiconductor materials are described. In particular, calculations of band structure and transient and equilibrated velocity-field relationships are being performed for Ga(x)In(1-x)As and Ga(x)In(1-x)AsyP(1-y), materials which may be suitable for fast logic or microwave devices. Methods for describing pseudopotential variations and chemical disorder in alloys are discussed. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1979
Accession Number
ADA073009

Entities

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Electric Fields
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Field Effect Transistors
  • Materials
  • Measurement
  • Scattering
  • Semiconductors
  • Simulations
  • Steady State
  • Stratified Fluids
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Fluid Mechanics and Fluid Dynamics.
  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene