Lifetime Control in Silicon through Focused Laser Beam Damage
Abstract
Minority carrier lifetime and resistivity engineering in silicon through use of high power laser beams is described. Unique doping profiles are produced through 80 Kev As(+) implantations followed by laser annealing. Minority carrier lifetime distributions on silicon surfaces are substantially improved through laser damage gettering. Laser operating conditions to obtain optimum lifetime and resistivity engineering effects are given.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1979
- Accession Number
- ADA073052
Entities
People
- G. H. Schwuttke
- Kaipei Yang
Organizations
- International Business Machines Corporation (Armonk, NY)